P2.9.1 Thermodynamic Studies on GaAs-Based Chemical Sensors with a Mixture of Pd and SiO2

Event

14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany

Chapter

P2.9 Technology and Application

Author(s)

C. Wei, S. Tan, T. Tsai, W. Lour - Department of Electrical Engineering, National Taiwan Ocean University (Taiwan), C. Lo - Department of Electrical Engineering, National Sun Yat-Sen University (Taiwan)

Pages

1696 - 1698

DOI

10.5162/IMCS2012/P2.9.1

ISBN

978-3-9813484-2-2

Price

free

Abstract

Thermodynamic sensing properties of GaAs-based hydrogen sensors with a mixture of Pd and SiO2 were investigated by raising ambient temperature. Temperature dependence of the ability of SiO2 to catch hydrogen atoms was addressed to introduce a newly possible sensing mechanism for innovative sensor design. A high sensing current gain over 3000, a detection limit lower than 50 ppm, and a response time shorter than 20 s were obtained from the sensor.