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B3.4 - Practical Tunneling Magnetoresistive Z-Axis Sensors

Event
AMA Conferences 2015
2015-05-19 - 2015-05-21
Nürnberg, Germany
Band
Proceedings SENSOR 2015
Chapter
B3 - Magnetoresistive Sensors
Author(s)
J. Deak - MultiDimension Technology Co. Ltd., Zhangjiagang (China)
Pages
245 - 250
DOI
10.5162/sensor2015/B3.4
ISBN
978-3-9813484-8-4
Price
free

Abstract

A practical tunneling magnetoresistive magnetic field sensor for detecting the magnetic field component perpendicular to the plane of the sensor substrate (Z-axis) is described. The sensor consists of MgO-based MTJs (magnetic tunnel junctions) interconnected as a full-bridge and combined with an array of on-chip flux concentrators. The flux concentrator array is designed to steer the flux from the vertical direction into the in-plane direction parallel to the surface of the substrate enabling the MTJ full-bridge to exhibit true push-pull operation, while additionally providing a high packing density of MTJ elements, which enables robust and high precision performance. The resulting single-chip sensors can be tuned for high sensitivity exceeding 3 mV/V/G or wide dynamic range exceeding 1000 G.

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