OT3.181 - Effect of Annealing on Pyroelectric Response and Aging Behavior of Al-doped HfO2 Thin-films
- Event
- EUROSENSORS XXXVI
2024-09-01 - 2024-09-04
Debrecen (Hungary) - Band
- Lectures
- Chapter
- OT3 - Advanced Materials and Technologies
- Author(s)
- M. Neuber, M. Benyeogor, T. Kämpfe, M. Lederer - Fraunhofer Institute for Photonic Microsystems, Dresden (Germany)
- Pages
- 53 - 54
- DOI
- 10.5162/EUROSENSORSXXXVI/OT3.181
- ISBN
- 978-3-910600-03-4
- Price
- free
Abstract
Doping and annealing have been effective in improving the pyroelectric properties of hafnium oxide thin films (HfO2). A blind spot is the effect of these on their durability. To unravel this, we characterized the temporal decay (in terms of pyroelectric response) of 10 nm thick Al-doped HfO2 films (HAO) that are annealed at 650°C and 800°C. Remarkably high pyroelectric coefficient of about 91.5 μC/m²·K was repeatedly detected in HAO films annealed at 800°C. Unlike existing Zr-/Si-doped HfO2 films (HZO and HSO), the HAO films exhibit unique aging behaviors that are characterized by significantly lower decay rates, making it a promising material for precision sensing and thermal energy harvesting.