3.3.2 Gas Sensing Properties of Pulsed Laser Deposited Vanadium Oxide Thin Films
- Event
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany - Chapter
- 3.3 Metal Oxide-based Gas Sensors III
- Author(s)
- J. Huotari, A. Lloyd Spetz, J. Lappalaien - Microelectronics and Material Physics Laboratories, University of Oulu (Finland)
- Pages
- 279 - 382
- DOI
- 10.5162/IMCS2012/3.3.2
- ISBN
- 978-3-9813484-2-2
- Price
- free
Abstract
Vanadium oxide thin films were fabricated by pulsed laser deposition (PLD). The crystal structure and symmetry of the deposited films was studied with X-ray diffraction (XRD) and Raman spectroscopy, respectively. The surface morphology was studied with atomic force microscope (AFM). The thin films consisted mostly of V2O5 phase of vanadium oxides, but also of another phase, which is generally found in form of nanotubes. The measured optical transmission spectra of the films also supported the existence of different phases. The electrical resistivity of the films as a function of temperature behaved like in a typical semiconductor. The gas sensing properties of the films were characterized for different NO concentrations. The results showed a response to NO, which varied from oxidative to reducing according to the film composition.