3.5.2 FluorinatedHfO2 ISFET as pK sensor with highly sensitivity
- Event
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany - Chapter
- 3.5 ISFETs
- Author(s)
- T. Lu, K. Ho, C. Yang, J. Wang, C. Lai - Department of Electronic Engineering, Chang Gung University (Taiwan), D. Pijanowska - Nalecz Institute of Biocybernetics and Biomedical Engineering, Polish Academy of Sciences (Poland), B. Jaroszewicz, M. Zaborowski - Institute of Electron Technology (Poland)
- Pages
- 309 - 311
- DOI
- 10.5162/IMCS2012/3.5.2
- ISBN
- 978-3-9813484-2-2
- Price
- free
Abstract
Ion Sensitive Field-Effect Transistor (ISFET)-based sensors with fluorinated-hafnium oxide (HfO2) thin film fabricated by atomic layer deposition (ALD) and thermal carbon tetrafluoride (CF4) plasma posttreatment was investigated for pK detection. The developed fluorinated-HfO2 ISFET is highly sensitive to K +ions (59.5 mV/pK) in the concentration range between 0.01 and 100 mM. When compared to the same structure without plasma treatment, the sensitivity was improved by fourteenfold.