5.3.1 High-precise transient response model of semiconductor gas sensor considering temperature dependency of carrier mobility
- Event
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany - Chapter
- 5.3 Metal Oxide-based Gas Sensors V
- Author(s)
- A. Fujimoto, M. Kita, Y. Katoh - Wakayama National College of Technology (Japan)
- Pages
- 454 - 456
- DOI
- 10.5162/IMCS2012/5.3.1
- ISBN
- 978-3-9813484-2-2
- Price
- free
Abstract
The model of transient response of SnO2 semiconductor gas sensor under modulation heating has been constructed and improved successfully to reveal the forming process of the transient response. The transient responses were estimated by carrier concentrations determined from oxygen concentrations calculated by the model. The model made clear that activation energy of the chemical reaction affected strongly to the transient response of the sensor. Calculated transient responses using activation energies determined by molecular orbital calculations had deviated from experimental results. Temperature dependency of electron mobility in SnO2 was introduced newly to the model to decrease the deviation. The deviation could be decreased 1/10 at the sum of square. New precise model of transient response have been constructed by considering the temperature dependency.