C3.3 - Investigation of High-Voltage-CMOS-Technology for the Design of Dynamically Reconfigurable Sensor Electronics
- Event
- SENSOR+TEST Conferences 2009
2009-05-26 - 2009-05-28
Congress Center Nürnberg - Band
- Proceedings SENSOR 2009, Volume I
- Chapter
- C3 - Sensor Electronics III
- Author(s)
- M. Hetterich, A. Koenig - Technische Universität Kaiserslautern, Kaiserslautern, Germany
- Pages
- 307 - 312
- DOI
- 10.5162/sensor09/v1/c3.3
- ISBN
- 978-3-9810993-4-8
- Price
- free
Abstract
The surging advance in microelectronics, predicted and driven by Moore's law, renders ever diminishing transistor sizes, increasing packaging densities and unprecedented complexity of circuits and systems. This is particularly good news for digital designs, however, for analog and mixed-signal sensor electronics, which comprise a small yet essential fraction of a large variety of embedded and integrated systems in industrial application systems, this is less fortunate. In particular, the on-going reduction of supply voltages is detrimental for analog electronics in general. Additionally, interfacing to heterogeneous sensor implementations, the need to deal with higher voltages than 1.8 V-3.3 V might arise. In particular, an rapidly growing variety of sensor solutions becomes available and finds application in a plethora of tasks in measurement, control, automation, and general intelligent systems design. Security or driver assistance systems in the automotive field or monitoring tasks in smart environments and ambient intelligence are lucid examples. In the required embedded or integrated sensor system implementation analog and mixed-signal sensor electronics comprise a small yet essential fraction, which is extremely vulnerable to numerous static and dynamic sources of perturbation. Flexibility, robustness, and reliability are key issues in designing and operating such systems.