P2.4.18 MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications

Event

14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany

Chapter

P2.4 Nanostructured Sensors

Author(s)

Z. Zytkiewicz, M. Sobanska, K. Klosek, A. Reszka, A. Wierzbicka - Institute of Physics, Polish Academy of Sciences (Poland), R. Kruszka, K. Golaszewska - Institute of Electron Technology (Poland), M. Setkiewicz, T. Pustelny - Silesian University of Technology (Poland)

Pages

1554 - 1556

DOI

10.5162/IMCS2012/P2.4.18

ISBN

978-3-9813484-2-2

Price

free

Abstract

GaN nanowires (NWs) were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy (PAMBE). The NWs nucleated spontaneously, no catalyst was used for their growth. SEM studies show that the NWs are homogenously distributed and well aligned with the c-axis being perpendicular to the substrate, while TEM analysis reveals their high crystalline quality. No GaN wetting layer between NWs was detected. Two types of NWs-based gas sensors were prepared. Our preliminary tests in NO2, NH3 and hydrogen atmospheres at temperatures up to 80oC show that structures of GaN NWs on Si are promising building blocks for simple and highly sensitive gas sensor devices.