09 - Silicon Carbide Sensor Systems for Harsh Environment Market Applications
- Event
- Fourth Scientific Meeting EuNetAir
2015-06-03 - 2015-06-05
Linkoping University, Linkoping, Sweden - Band
- Fourth Scientific Meeting EuNetAir
- Chapter
- Proceedings
- Author(s)
- M. Andersson, B. Hammarlund - SenSiC AB, Kista, Sweden, A. Lloyd Spetz, D. Puglisi - Linköping University, Linköping, Sweden
- Pages
- 32 - 35
- DOI
- 10.5162/4EuNetAir2015/09
- Price
- free
Abstract
The silicon carbide (SiC) processing technology for 4 inch wafers, with 6 inch in the planning phase, has reached matureness of mass production. Field effect devices based on silicon carbide, SiC-FET, employing a catalytic metal such as porous iridium (Ir) as the gate material change the current-voltage characteristics due to gas interactions with the gate metallization. Several batches of sensor devices have improved the device performance and gas response characteristics and, together with important developments on packaging of the sensors, electronics and software, sensor systems are nowadays commercially available. Here we report on Ir-gated SiC-FETs for indoor and outdoor air quality monitoring and control applications. In particular, we focus on the highest sensitivity of such sensors to ultra-low concentrations of three hazardous volatile organic compounds, i.e., benzene, naphthalene, and formaldehyde, which are commonly found in indoor environments and are considered carcinogenic already at the low parts per billion concentration range.