GS3.3 - The role of Ce Doping in Enhancing Sensing Performance of ZnO-based Gas Sensor by Adjusting the Proportion of Oxygen Species
- Event
- 17th International Meeting on Chemical Sensors - IMCS 2018
2018-07-15 - 2018-07-19
Vienna, Austria - Chapter
- Gas Sensors 3
- Author(s)
- Y. Zhang, Y. Liu, L. Zhou, D. Liu, F. Liu, F. Liu, X. Liang, X. Yan, Y. Gao, G. Lu - State Key Laboratory of Integrated Optoelectronics, Key Laboratory of gas sensors, Jilin Province and College of Electronic Science and Engineering, Jilin University, Changchun (China)
- Pages
- 130 - 131
- DOI
- 10.5162/IMCS2018/GS3.3
- ISBN
- 978-3-9816876-9-9
- Price
- free
Abstract
Flower-liked ZnO architectures and Ce doped ZnO materials with different amounts (0.2, 0.5, 1.2 and 2 at%Ce) were successfully synthesized by a simple room-temperature precipitation route. As the gas sensing materials, their sensing performance were investigated systematically. The results indicate that Ce doping can improve the performance of ZnO sensor. The ZnO doped with 0.5 at% Ce exhibited the highest response to ethanol at the operating temperature at 300⁰C and the response value was aboutb 72.6 to 100 ppm ethanol. With Ce doping, the proportions of oxygen vacancy and chemisorbed oxygen species were increased obviously, which could greatly promote the gas sensing properties of surface resistance-type metal oxide semiconductors. Thus, the doping of flower-liked ZnO with Ce should be a promising approach for designing and fabricating the high performance gas sensor.