FE.4 - Inkjet-Printed PEI FET-Type Humidity Sensor Having a Horizontal Floating-Gate
- Event
- 17th International Meeting on Chemical Sensors - IMCS 2018
2018-07-15 - 2018-07-19
Vienna, Austria - Chapter
- Field-Effect Sensors
- Author(s)
- M. Wu, J. Shin, Y. Hong, D. Jang, J. Lee - Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul Nation University, Seoul (South-Korea), X. Jin - College of Information Science and Engineering, Shenyang University of Technology, Shenyang (China)
- Pages
- 429 - 430
- DOI
- 10.5162/IMCS2018/FE.4
- ISBN
- 978-3-9816876-9-9
- Price
- free
Abstract
In this paper, a field-effect transistor (FET) humidity sensor having horizontal floating-gate (FG) and control-gate (CG) is investigated. Branched polyethylenimine (PEI) is formed on the FET platform for the humidity detection. The inkjet printing process is adopted to deposit the sensing layer, which is convenient and low cost. The humidity sensing properties of the proposed sensor are measured at room temperature. The response, response time and recovery time of the sensor are 415%, 3 min and 13 min for 20% relative humidity (RH), respectively. The sensing mechanism is also explained from the perspective of the ion motions in the sensing material.