P2EC.11 - Lateral Double-diffused Metal Oxide Semiconductor for Sensor Applications
- Event
- 17th International Meeting on Chemical Sensors - IMCS 2018
2018-07-15 - 2018-07-19
Vienna, Austria - Chapter
- P-2 - Electrochemical Sensors
- Author(s)
- H. Jeong, H. Kwon, J. Kim, J. Kwon, S. Kim, B. Xu, R. Khan, S. Kang - School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu (South Korea)
- Pages
- 721 - 722
- DOI
- 10.5162/IMCS2018/P2EC.11
- ISBN
- 978-3-9816876-9-9
- Price
- free
Abstract
In this study, we applied LDMOS using floating gate structure for chemical pH sensors. We confirmed the pH response characteristics of the proposed device. With this approach, pH-sensitive devices can be fabricated for chemical and biological sensor applications. To demonstrate the properties, we performed a response experiment by changing the pH value from pH 4 to pH 10. Results showed that the sensitivity of the proposed sensor to detect pH buffer solution was 1.5 nA/pH. The result of sensor application experiment proved that the LDMOS can be used to realize a sensor in chemical and biological sensor applications. Therefore, the proposed device was expected to be applicable to the design of pH-sensing devices in chemical and biological sensor applications.