P1.5.3 Gas Sensing Characteristics of Low-powered Dual MOSFET Hydrogen Sensors
- Event
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany - Chapter
- P1.5 FET-based Sensors
- Author(s)
- B. Kim, J. Yoon, J. Kim - Department of Materials Science and Engineering, University of Seoul (Korea)
- Pages
- 1032 - 1034
- DOI
- 10.5162/IMCS2012/P1.5.3
- ISBN
- 978-3-9813484-2-2
- Price
- free
Abstract
A low-powered hydrogen sensitive dual-MOSFET device was designed, fabricated and characterized for self compensation to electric signal degradation. Differential outputs in both sensitive and reference FETs were stable for changes in the outer environments due to the same dependence of the electrical characteristics. The proposed sensor design showed low power consumption (45.5 mW at 150°C) by achieving complete heat isolation. Stable responses to H2 gas were observed over a range of temperatures and the optimal point in the micro-heater operation was approximately 150°C (The highest sensitivity was 111.17 _A to 5,000 ppm H2 gas, the response and recovery times were 18 sec and 19 sec, espectively.). From the experimental results, the increased sensitivity to various H2 concentrations corresponded to the Langmuir relationship.