B1.2 - Problem-adapted Modeling of RF MEMS Switches
- Event
- AMA Conferences 2013
2013-05-14 - 2013-05-16
Nürnberg - Band
- Proceedings SENSOR 2013
- Chapter
- B1 - Modeling & Simulation I
- Author(s)
- G. Schrag, T. Künzig, M. Nießner - Munich University of Technology (Germany)
- Pages
- 186 - 191
- DOI
- 10.5162/sensor2013/B1.2
- ISBN
- 978-3-9813484-3-9
- Price
- free
Abstract
We present two problem-adapted, tailored modeling approaches for RF-MEMS switches, which are applicable, in principle, to any capacitive MEMS device and are based on finite element analysis (FEA) combined with analytical, lumped-element and/or reduced-order modeling techniques. The first model has been tailored for detailed investigations on device-level (problem-adapted FE model), while the second approach is suited for system-level simulation and based on macromodels generated from a discretized FE model of the device. Both approaches enable efficient and physics-based simulation of static and dynamic device characteristics, which is demonstrated by comparing the simulation results of two different RF MEMS switch designs to optical measurements.