B7.1 Highly Stable Pressure Sensors made of <110> Silicon
- Event
- SMSI 2021
2021-05-03 - 2021-05-06
digital - Band
- SMSI 2021 - Sensors and Instrumentation
- Chapter
- B7 Sensor Materials I
- Author(s)
- T. Frank, R. Röder, S. Jagomast, H. Übensee, A. Cyriax, T. Ortlepp - Forschungsinstitut für Mikrosensorik GmbH, Erfurt (Germany)
- Pages
- 145 - 146
- DOI
- 10.5162/SMSI2021/B7.1
- ISBN
- 978-3-9819376-4-0
- Price
- free
Abstract
A pressure sensor chip of <110> p-silicon is described. The piezoresistive measuring resistors run, in <110> direction. They have only a noticeable longitudinal effect. This is the first prerequisite for an ideal mirror-image arrangement of a measuring bridge. Thus it is possible to achieve an ideal symmetrical change in resistance due to the compressive load. These sensors were manufactured, the effectiveness is presented.