P11 - pHEMT based power detectors for radars
- Event
- iCCC2024 - iCampµs Cottbus Conference
2024-05-14 - 2024-05-16
Cottbus - Band
- Poster
- Chapter
- Gesundheit
- Author(s)
- P. Manchanda, C. Andrei, F. Tost, M. Rudolph - Brandenburgische Technische Universität Cottbus-Senftenberg, Cottbus
- Pages
- 150 - 152
- DOI
- 10.5162/iCCC2024/P11
- ISBN
- 978-3-910600-00-3
- Price
- free
Abstract
This paper presents power detector designs using pseudomorphic High-Electron-Mobility Transistor (pHEMT) technology to address limitations inherent in conventional diode-based power detector systems. Based on commercially available CEL 3520k3 pHEMT, two detector configurations are investigated.
The Angelov model establishes the non-linear relationship between drain current and voltage parameters. The designs are simulated using Keysight ADS and measured at 20 GHz. A dynamic range of 28 dB, from -30 dBm to -2 dBm for a gate voltage of -0.8 V, is measured. This extended range proves pivotal for enhancing the performance of radar systems operating at higher input powers.