P21 - Rational design and development of room temperature hydrogen sensors compatible with CMOS technology: a necessary step for the coming renewable hydrogen economy
- Event
- iCCC2024 - iCampµs Cottbus Conference
2024-05-14 - 2024-05-16
Cottbus - Band
- Poster
- Chapter
- Sensorik
- Author(s)
- J. Kosto, R. Tschammer, C. Morales, K. Henkel, J. Flege, M. Ratzke, I. Fischer - Brandenburgische Technische Universität Cottbus-Senftenberg, Cottbus, I. Costina, C. Wenger - IHP Leibniz-Institut für innovative Mikroelektronik, Frankfurt/Oder
- Pages
- 182 - 185
- DOI
- 10.5162/iCCC2024/P21
- ISBN
- 978-3-910600-00-3
- Price
- free
Abstract
The transition towards a new, renewable energy system based on green energy vectors, such as hy-drogen, requires not only direct energy conversion and storage systems, but also the development of auxiliary components, such as highly sensitive hydrogen gas sensors integrated into mass devices that operate at ambient conditions. Despite the recent advances in nanostructured metal oxide thin films in terms of simple fabrication processes and compatibility with integrated circuits, high sensitivity, and short response/recovery times usually require the use of expensive noble metals or elevated tem-peratures (>250 ºC), which results in high power consumption and poor long-term stability. This article presents the first steps of the work on developing a novel resistive hydrogen gas sensor based on ultrathin cerium oxide films, compatible with complementary metal oxide semiconductor technology and capable of operating at room temperature. Here, we show a multidisciplinary bottom-up approach combining different work areas for the sensor development, such as sensor architecture, sensing mechanism and deposition strategy of the active layer, electrical contact design depending on the desired electrical output, and fast testing under controlled environments.