I1.1 - High performance PZT based pyro-detectors with D* of 2x10E9 cmHzE½/W for presence, gas and spectroscopy applications
- Event
- SENSOR+TEST Conferences 2009
2009-05-26 - 2009-05-28
Congress Center Nürnberg - Band
- Proceedings OPTO 2009 & IRS² 2009
- Chapter
- IRS² 1 - Infrared Sensors
- Author(s)
- C. Giebeler, J. Wright, S. Freeborn, N. Conway, T. Chamberlain, P. Clark - PYREOS Ltd, Edinburgh, Great Britain, M. Schreiter, D. Pitzer - Siemens AG, Munich, Germany, R. Koehler - DIAS Infrared GmbH, Dresden, Germany
- Pages
- 185 - 189
- DOI
- 10.5162/irs09/i1.1
- ISBN
- 978-3-9810993-6-2
- Price
- free
Abstract
A platform technology for low and high resolution infrared detectors has been developed. The technology is based on sputtered self-polarised lead-zirconium-titanate (PZT) films with typical film thicknesses of 20~1000 nm. These detectors are especially suited to detect radiation in the mid to far infrared wavelength range from 3-15 µm. The manufacturing process for PZT based infrared detectors is compatible with standard semiconductor/MEMS process technology which allows the easy customisabon of sensor elements and results on single element, low resolubon array and 1x100 line sensors are presented. The current performance of the detector elements is very good with a typical D* of 2-5x10E8 cmHzE½/W. In order to improve the infrared absorption coefficient from currently around 20 %, infrared absorption layers with low heat capacity have been developed that increases the IR absorption to above 90 % over the relevant wavelength range. Novel PZT based infrared detectors with integrated infrared absorption layer are expected to achieve a D* of 2x10E9 cmHzE½/W.