P1NM.19 - Silicon Nanowire pH Sensors Fabricated Using Conventional CMOS Technologies
- Event
- 17th International Meeting on Chemical Sensors - IMCS 2018
2018-07-15 - 2018-07-19
Vienna, Austria - Chapter
- P-1 - Nanomaterials
- Author(s)
- Z. Wang, Z. Zhao, K. Zhou, L. Pan - Institute of Microelectronics, Tsinghua University, Beijing (China)
- Pages
- 614 - 615
- DOI
- 10.5162/IMCS2018/P1NM.19
- ISBN
- 978-3-9816876-9-9
- Price
- free
Abstract
This paper reports a fabrication method and an integration scheme for silicon nanowire (SNW) pH sensors. By using sidewall techniques, SNW with feature size down to nanometer regime can be obtained using conventional CMOS technology. The SNWs are operated in a FET configuration as a pH sensor, and sensitivity as high as 54.5 mV/pH for pH values from 1 to 12 is achieved.