P1SM.4 - Ion Sensitive Field Effect Transistor Performance Enhancement with High Bandgap Semiconductors
- Event
- 17th International Meeting on Chemical Sensors - IMCS 2018
2018-07-15 - 2018-07-19
Vienna, Austria - Chapter
- P-1 - Sensor Systems and Manufacturing
- Author(s)
- S. Heidari, M. Karami - School of Electrical Engineering, Iran University of Science and Technology, Tehran (Iran)
- Pages
- 645 - 646
- DOI
- 10.5162/IMCS2018/P1SM.4
- ISBN
- 978-3-9816876-9-9
- Price
- free
Abstract
This paper introduces high bandgap semiconductors to increase the sensitivity of Ion Sensitive Field Effect Transistor (ISFET) to concentration of hydrogen (pH) of electrolyte. Silicon dioxide is used as the sensing film in the proposed device. The ISFET principle of performance based on electrolyteinsulator-semiconductor structure is explained. The simulation results show ISFET with GaAs substrate has in average 2.3 times more sensitivity to pH changes in compare with ISFET using Si substrate.