D5.0 - Compressed Sensing Spectral Photoluminescence Imaging of Wide Bandgap Semiconductor Materials for Power Electronics Applications
- Event
- SMSI 2023
2023-05-08 - 2023-05-11
Nürnberg - Band
- Lectures
- Chapter
- D5 - Metrology of compound semiconductors for manufacturing power electronics
- Author(s)
- S. Wood, J. Blakesley, G. Koutsourakis, A. Thompson - National Physical Laboratory, Teddington (United Kingdom)
- Pages
- 229 - 230
- DOI
- 10.5162/SMSI2023/D5.0
- ISBN
- 978-3-9819376-8-8
- Price
- free
Abstract
A compressed sensing approach has been adopted for spectral photoluminescence imaging measurements at NPL. The features and performance of the proposed methodology is initially studied with simulations, which looked at the requirements for a measurement system implementation. Simulation results are presented for a typical homoepitaxial 4H-SiC defect, while an experimental implementation is proposed. Compressed sensing can offer a higher signal to noise ratio and faster measurement acquisition for spectral PL measurements than conventional techniques.