7.2 - Integration concept of plasmonic TiN nanohole arrays in a 200 mm BiCMOS Si technology for refractive index sensor applications
- Event
- iCCC2024 - iCampµs Cottbus Conference
2024-05-14 - 2024-05-16
Cottbus - Band
- Vorträge
- Chapter
- Sensorik & Messtechnik
- Author(s)
- J. Jose, C. Mai, C. Wenger - IHP Leibniz-Institut für innovative Mikroelektronik, Frankfurt/Oder, S. Reiter, I. Fischer - Brandenburgische Technische Universität Cottbus-Senftenberg, Cottbus
- Pages
- 96 - 99
- DOI
- 10.5162/iCCC2024/7.2
- ISBN
- 978-3-910600-00-3
- Price
- free
Abstract
In this work, we present an integration concept for plasmonic Titanium Nitride (TiN) nanohole arrays (NHA) into a 200 mm BiCMOS silicon (Si) technology. For the fabrication of a TiN NHA, we investigated the TiN layer surface roughness in dependence on different process variations. Moreover, we developed a process module to release the TiN NHA to enable a direct contact with materials to be analyzed. By using an amorphous silicon (a-Si) stop layer, we are able to realize a controlled stop at the bottom level of the TiN NHA.