7.4 - Polycrystalline Nb2O5 Compared on Constant-Capacitance Structures and on Ion-Sensitive Field-Effect Transistors for pH-Sensing
- Event
- iCCC2024 - iCampµs Cottbus Conference
2024-05-14 - 2024-05-16
Cottbus - Band
- Vorträge
- Chapter
- Sensorik & Messtechnik
- Author(s)
- C. Beale, M. Wambold, P. Bott, L. Kühne, F. Al-Falahi, E. Kurth, O. Hild - Fraunhofer IPMS, Dresden
- Pages
- 104 - 107
- DOI
- 10.5162/iCCC2024/7.4
- ISBN
- 978-3-910600-00-3
- Price
- free
Abstract
Investigating the suitability of a pH-sensing layer for ion-sensitive field-effect transistors can be costly and time consum-ing. Ways to develop sensing layers with cheaper and faster methods, such as the use of electrolyte-insulator-semicon-ductor structures measured at constant-capacitance, may aid enormously in investigating less understood materials such as Nb2O5. This work shows that constant-capacitance measurements, using 2 different samples having polycrystalline Nb2O5 at 2 different annealing temperatures of 800 °C and 950 °C, can predict successful integration of Nb2O5 into ISFETs that approach Nernstian sensitivity and exhibit low hysteresis from pH 1 to pH 13.