OT5.81 - CMOS Compatible Electrostatically Formed Silicon Nanowire for Selective Ppb Level Sensing Platform
- Event
- EUROSENSORS XXXVI
2024-09-01 - 2024-09-04
Debrecen (Hungary) - Band
- Lectures
- Chapter
- OT5 - Chemical Sensors
- Author(s)
- Y. Rosenwaks, S. M. Siddiqui, S. A. Alexander, I. Shem Tov, A. Mukherjee, Y. Mazor - Tel Aviv University, Tel Aviv (Israel)
- Pages
- 105 - 106
- DOI
- 10.5162/EUROSENSORSXXXVI/OT5.81
- ISBN
- 978-3-910600-03-4
- Price
- free
Abstract
Electrostatically Formed Nanowire (EFN) sensor is a CMOS based multi-gate silicon nanowire (NW) field effect transistor (FET) where the nanowire is formed electrostatically post fabrication. By employing a specially designed large area sensing antenna we improve the EFN sensor response by several orders of magnitudes. We demonstrate a world record response of ~ 90 % to 30 ppb H2 which can be further improved by several orders of magnitude with increasing antenna size.