OT5.267 - NO2 Sensor on Ambipolar Si-Junctionless Nanowire Transistor
- Event
- EUROSENSORS XXXVI
2024-09-01 - 2024-09-04
Debrecen (Hungary) - Band
- Lectures
- Chapter
- OT5 - Chemical Sensors
- Author(s)
- V. Vaishali, B. Subhajit, H. Stig, H. D. Justin - University College Cork, Cork (Ireland)
- Pages
- 147 - 148
- DOI
- 10.5162/EUROSENSORSXXXVI/OT5.267
- ISBN
- 978-3-910600-03-4
- Price
- free
Abstract
We demonstrate highly effective ambipolar Si-junction less nanowire transistors (JNTs) with a distinct dual reaction to oxidative pollutant NO2. DFT study reveals NO2 acts as an electron acceptor and produces holes; acting as pseudo dopant for Si JNTs; significantly altering different JNT parameters. Different Si-JNT characteristics showed dynamic change on both the p- and n-sides, i.e. dual response; of the ambipolar transistor devices upon exposure to NO2 in a wide mixing ratio (250 ppb-50 ppm). Additionally, we have improved the discrimination between different gases (NO2, NH3, SO2 and CH4) by using multivariate calibration.