PT7.254 - Design, Fabrication and Validation of N-doped Si/Au/Al Schottky Barrier Device for detecting Surface Plasmon Resonance-Induced Hot-Electrons
- Event
- EUROSENSORS XXXVI
2024-09-01 - 2024-09-04
Debrecen (Hungary) - Band
- Poster
- Chapter
- PT7 - Photonics and Optical Microsystems
- Author(s)
- C. Y. Chien, C. Wang, T. H. Wu, C. W. Lin, Z. H. Yang, C. R. Guo, C. H. Yang - National Taiwan University, Taipei (Taiwan)
- Pages
- 483 - 484
- DOI
- 10.5162/EUROSENSORSXXXVI/PT7.254
- ISBN
- 978-3-910600-03-4
- Price
- free
Abstract
Traditional Surface Plasmon Resonance (SPR) biosensors, which measure scattering light to charac-terize biomolecular interactions. This study introduces a novel SPR sensor design based on SPR-induced hot electrons using a Schottky barrier structure (Au/n-Si/Al). This innovative design filters higher energy surface plasmons and enables current sensing. We established the device fabrication processes, including design, debugging, and fabrication, developed the measurement system, con-ducted device testing, and thoroughly analyzed the chip's electrical and optical characteristics.