PT7.272 - Accurate silicon epitaxial multilayer characterization for CMOS imager applications
- Event
- EUROSENSORS XXXVI
2024-09-01 - 2024-09-04
Debrecen (Hungary) - Band
- Poster
- Chapter
- PT7 - Photonics and Optical Microsystems
- Author(s)
- P. Basa, E. Najbauer, S. Biro, L. Sinkó, Z. Durkó, Z. Kiss, G. Nadudvari - Semilab Co. Ltd., Budapest (HUNGARY)
- Pages
- 485 - 486
- DOI
- 10.5162/EUROSENSORSXXXVI/PT7.272
- ISBN
- 978-3-910600-03-4
- Price
- free
Abstract
Silicon epitaxial layer technology provides a key building block for charged particle tracking devices, eg. complementary metal-oxide semiconductor (CMOS) active pixel sensors. Such detector elements are realized on a thick (~775um) heavily doped top quality 12” silicon substrate with a subsequent thin (~1-20um) lightly doped silicon epitaxial layer or multilayer deposition. This epitaxial layer structure also provides virtual substrate for further CMOS manufacturing steps, relatively free of metal contami-nation and/or crystallographic defects. Accurate characterization of such structures, in terms of multilayer thickness, dopant concentrations, and buried defect density is possible with advanced optical instrumentation [3-6]. A round-robin test series were conducted on typical samples with silicon epilayer structures, including Fourier-transform infrared (FTIR) reflectometry, with results confirmed by spreading resistance profiling (SRP) and imag-ing photoluminescence (PL) techniques.