P26 - Total-Ionizing-Dose Radiation Hardness of PJFETs integrated in a 130 nm SiGe BiCMOS Technology
- Event
- iCCC2024 - iCampµs Cottbus Conference
2024-05-14 - 2024-05-16
Cottbus - Band
- Poster
- Chapter
- Material- & Prozesstechnologien und Lab-on-Chip
- Author(s)
- F. Korndörfer, J. Schmidt, R. Sorge - IHP Leibniz-Institut für innovative Mikroelektronik, Frankfurt/Oder
- Pages
- 199 - 202
- DOI
- 10.5162/iCCC2024/P26
- ISBN
- 978-3-910600-00-3
- Price
- free
Abstract
This paper reports on the effects of 10 keV x-rays on the static and noise behaviour of integrated p-channel JFETs and compares these results to measurements on a commercially available discrete NJFET. It is shown that exposure to x-rays affects the DC device parameters and noise spectral density in a way which is substantially different for the two types of devices. After irradiation PJFETs show an increased gate leakage current and an increased noise voltage spectrum over a broad frequency band, whereas NJFETs show only minor degradation of the noise voltage.