P30 - High Frequency Properties of an Integrated PJFET for Sensor Applications
- Event
- iCCC2024 - iCampµs Cottbus Conference
2024-05-14 - 2024-05-16
Cottbus - Band
- Poster
- Chapter
- Material- & Prozesstechnologien und Lab-on-Chip
- Author(s)
- C. Wipf, R. Sorge - IHP – Leibniz-Institut für innovative Mikroelektronik, Frankfurt/Oder
- Pages
- 216 - 217
- DOI
- 10.5162/iCCC2024/P30
- ISBN
- 978-3-910600-00-3
- Price
- free
Abstract
High frequency properties of a P-channel JFET modularly integrated in a 130 nm SiGe:C BiCMOS tech-nology offering bipolar transistors with fT / fmax of 300 GHz / 500 GHz are presented. The measured cut-off frequencies fT / fmax of 3.5 GHz / 11 GHz are comparable with published values form physically faster N-channel JFET. Furthermore, the influence of de-embedding is demonstrated and the calculation of fT based on |h21| and gm is compared.