P27 - Total-Ionizing-Dose Radiation Hardness of Inter-Layer Dielectrics in a 130 nm SiGe BiCMOS Technology
- Event
- iCCC2024 - iCampµs Cottbus Conference
2024-05-14 - 2024-05-16
Cottbus - Band
- Poster
- Chapter
- Material- & Prozesstechnologien und Lab-on-Chip
- Author(s)
- F. Korndörfer, J. Schmidt, R. Sorge - IHP Leibniz-Institut für innovative Mikroelektronik, Frankfurt/Oder
- Pages
- 203 - 206
- DOI
- 10.5162/iCCC2024/P27
- ISBN
- 978-3-910600-00-3
- Price
- free
Abstract
This paper investigates the influence of interlayer dielectric layer (ILD) oxide stacks on the underlying silicon bulk. MOS-like test structures with ILD stacks composed of CVD Si oxides and differently processed SiN layers were used for measurements of transistor characteristics and gated-diode measurements before and after irradiation with 10 keV x-rays. Strong influence of the detailed processing conditions of the silicon nitride layers on the Si substrate was found. Total ionizing dose irradiation response of the ILD stacks was very similar.