OT6.260 - Characterization of an Integrated Pt Counter Electrode on GaN/AlGaN-ISFET Wheatstone Bridge pH-sensors
- Event
- EUROSENSORS XXXVI
2024-09-01 - 2024-09-04
Debrecen (Hungary) - Band
- Lectures
- Chapter
- OT6 - Biochemical sensors, Microfluidics, Lab-on-a-Chip and Organ-On-Chip Systems
- Author(s)
- A. Hinz, G. Steingelb, C. Habben, S. Figge, M. Eickhoff - University Bremen (Germany),
- Pages
- 199 - 200
- DOI
- 10.5162/EUROSENSORSXXXVI/OT6.260
- ISBN
- 978-3-910600-03-4
- Price
- free
Abstract
GaN/AlGaN high electron mobility transistors (HEMT) were used as a pH-sensors, employing a Wheat-stone bridge design in order to reduce parasitic effects on the sensor response. A Pt counter electrode was patterned directly on the sensor to achieve a more compact design and showed good operation characteristics. However, the signal stability was worse compared to an external counter electrode. In addition, we investigated the effect of different pH-sensitive gate layers, such as TiO2 and Ta2O5, as well as the compensation of temperature effects and light-induced drift in the Wheatstone design.